3SK295
vs
BF1100RT/R
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Not Recommended
Obsolete
Ihs Manufacturer
RENESAS ELECTRONICS CORP
NXP SEMICONDUCTORS
Package Description
MPAK-4
MICRO MINIATURE, PLASTIC PACKAGE-4
Pin Count
4
4
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Date Of Intro
1997-03-01
Case Connection
SOURCE
SOURCE
Configuration
SINGLE
COMPLEX
DS Breakdown Voltage-Min
12 V
14 V
Drain Current-Max (ID)
0.025 A
0.03 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
0.03 pF
0.035 pF
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
ULTRA HIGH FREQUENCY BAND
JESD-30 Code
R-PDSO-G4
R-PDSO-G4
Number of Elements
1
2
Number of Terminals
4
4
Operating Mode
DUAL GATE, DEPLETION MODE
DUAL GATE, ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
0.15 W
Power Gain-Min (Gp)
16 dB
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
AMPLIFIER
AMPLIFIER
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Rohs Code
Additional Feature
LOW NOISE
JESD-609 Code
e3
Peak Reflow Temperature (Cel)
260
Terminal Finish
TIN
Compare 3SK295 with alternatives
Compare BF1100RT/R with alternatives