BD439S
vs
BD439
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Transferred
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
SAMSUNG SEMICONDUCTOR INC
Reach Compliance Code
unknown
unknown
Collector Current-Max (IC)
4 A
4 A
Collector-Emitter Voltage-Max
60 V
60 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
25
25
JEDEC-95 Code
TO-126
TO-126
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
JESD-609 Code
e3
Moisture Sensitivity Level
NOT APPLICABLE
Number of Elements
1
1
Number of Terminals
3
3
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
NPN
NPN
Qualification Status
COMMERCIAL
Not Qualified
Surface Mount
NO
NO
Terminal Finish
MATTE TIN
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
3 MHz
3 MHz
Base Number Matches
1
1
ECCN Code
EAR99
Case Connection
ISOLATED
Operating Temperature-Max
150 °C
Power Dissipation-Max (Abs)
36 W
Compare BD439S with alternatives
Compare BD439 with alternatives