BCW66-G
vs
PDTC124EET/R
feature comparison
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
SIEMENS A G
|
NXP SEMICONDUCTORS
|
| Package Description |
SMALL OUTLINE, R-PDSO-G3
|
SMALL OUTLINE, R-PDSO-G3
|
| Reach Compliance Code |
unknown
|
unknown
|
| Collector Current-Max (IC) |
1 A
|
0.1 A
|
| Collector-Emitter Voltage-Max |
45 V
|
50 V
|
| Configuration |
SINGLE
|
SINGLE WITH BUILT-IN RESISTOR
|
| DC Current Gain-Min (hFE) |
160
|
60
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
170 MHz
|
|
| VCEsat-Max |
0.7 V
|
|
| Base Number Matches |
4
|
1
|
| Rohs Code |
|
Yes
|
| Part Package Code |
|
SC-75
|
| Pin Count |
|
3
|
| ECCN Code |
|
EAR99
|
| Additional Feature |
|
BUILT IN BIAS RESISTANCE RATIO IS 1
|
| JESD-609 Code |
|
e3
|
| Terminal Finish |
|
TIN
|
|
|
|
Compare BCW66-G with alternatives
Compare PDTC124EET/R with alternatives