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BCR189F vs RN2113(TE85R) feature comparison

BCR189F Infineon Technologies AG

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RN2113(TE85R) Toshiba America Electronic Components

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Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG TOSHIBA CORP
Package Description SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-G3
Pin Count 3 3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Additional Feature BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 120 120
JESD-30 Code R-PDSO-F3 R-PDSO-G3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type PNP PNP
Power Dissipation-Max (Abs) 0.25 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form FLAT GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 200 MHz 200 MHz
Base Number Matches 1 1
Transistors » Small Signal Bipolar Transistors
Transistors » Small Signal Bipolar Transistors

Compare BCR189F with alternatives

Compare RN2113(TE85R) with alternatives