BCR169W
vs
PDTA144TEF
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
SIEMENS A G
NXP SEMICONDUCTORS
Package Description
SMALL OUTLINE, R-PDSO-G3
SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.21.00.75
Collector Current-Max (IC)
0.1 A
0.1 A
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
120
100
JESD-30 Code
R-PDSO-G3
R-PDSO-F3
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
PNP
PNP
Power Dissipation Ambient-Max
0.25 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
FLAT
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
200 MHz
VCEsat-Max
0.3 V
Base Number Matches
2
3
Rohs Code
Part Package Code
SC-89
Pin Count
3
Additional Feature
BUILT-IN BIAS RESISTORS
JESD-609 Code
e3
Power Dissipation-Max (Abs)
0.25 W
Terminal Finish
TIN
Compare BCR169W with alternatives
Compare PDTA144TEF with alternatives