BCR146W vs RN2116FV feature comparison

BCR146W Infineon Technologies AG

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RN2116FV Toshiba America Electronic Components

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG TOSHIBA CORP
Part Package Code SC-70
Package Description SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-F3
Pin Count 3 3
Manufacturer Package Code SOT323
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 0.47 BUILT-IN BIAS RESISTANCE RATIO IS 2.13
Collector Current-Max (IC) 0.07 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 50 30
JESD-30 Code R-PDSO-G3 R-PDSO-F3
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN PNP
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form GULL WING FLAT
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 150 MHz 200 MHz
Base Number Matches 2 1
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max (Abs) 0.15 W
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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