RN2116FV vs 2SC4018KT146/N feature comparison

RN2116FV Toshiba America Electronic Components

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2SC4018KT146/N ROHM Semiconductor

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer TOSHIBA CORP ROHM CO LTD
Package Description SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Additional Feature BUILT-IN BIAS RESISTANCE RATIO IS 2.13
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 32 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE
DC Current Gain-Min (hFE) 30 56
JESD-30 Code R-PDSO-F3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type PNP NPN
Power Dissipation-Max (Abs) 0.15 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form FLAT GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 200 MHz 230 MHz
Base Number Matches 1 1
Collector-Base Capacitance-Max 1.8 pF
VCEsat-Max 0.5 V

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