BCR108 vs KSR1113TI feature comparison

BCR108 Infineon Technologies AG

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KSR1113TI Samsung Semiconductor

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code End Of Life Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG SAMSUNG SEMICONDUCTOR INC
Part Package Code SOT-23 SOT-23
Package Description SOT-23, 3 PIN SMALL OUTLINE, R-PDSO-G3
Pin Count 3 3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 21.36, TR,7 INCH: 3000
Collector Current-Max (IC) 0.1 A
Collector-Base Capacitance-Max 2 pF
Collector-Emitter Voltage-Max 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 70
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.2 W
Qualification Status Not Qualified
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 170 MHz
VCEsat-Max 0.3 V
Base Number Matches 22 1

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