BCR108
vs
PDTC123YS
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
SIEMENS A G
NXP SEMICONDUCTORS
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.21.00.75
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 21.3636
BUILT-IN BIAS RESISTOR RATIO 4.5
Collector Current-Max (IC)
0.1 A
0.1 A
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
70
35
JESD-30 Code
R-PDSO-G3
O-PBCY-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
ROUND
Package Style
SMALL OUTLINE
CYLINDRICAL
Polarity/Channel Type
NPN
NPN
Power Dissipation Ambient-Max
0.2 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
NO
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
DUAL
BOTTOM
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
170 MHz
VCEsat-Max
0.3 V
Base Number Matches
2
3
Rohs Code
Part Package Code
TO-92
Package Description
CYLINDRICAL, O-PBCY-T3
Pin Count
3
JEDEC-95 Code
TO-92
JESD-609 Code
e3
Power Dissipation-Max (Abs)
0.5 W
Terminal Finish
Tin (Sn)
Compare BCR108 with alternatives
Compare PDTC123YS with alternatives