BC879,112
vs
BC879
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
PHILIPS SEMICONDUCTORS
|
| Part Package Code |
TO-92
|
|
| Package Description |
CYLINDRICAL, O-PBCY-T3
|
|
| Pin Count |
3
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
NXP
|
|
| Additional Feature |
BUILT-IN BIAS RESISTOR
|
|
| Collector Current-Max (IC) |
1 A
|
1 A
|
| Collector-Emitter Voltage-Max |
80 V
|
|
| Configuration |
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
DARLINGTON
|
| DC Current Gain-Min (hFE) |
2000
|
2000
|
| JEDEC-95 Code |
TO-92
|
|
| JESD-30 Code |
O-PBCY-T3
|
|
| JESD-609 Code |
e3
|
e3
|
| Number of Elements |
1
|
|
| Number of Terminals |
3
|
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
ROUND
|
|
| Package Style |
CYLINDRICAL
|
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
0.8 W
|
0.8 W
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN
|
Matte Tin (Sn)
|
| Terminal Form |
THROUGH-HOLE
|
|
| Terminal Position |
BOTTOM
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Transition Frequency-Nom (fT) |
200 MHz
|
200 MHz
|
| VCEsat-Max |
1.8 V
|
|
| Base Number Matches |
1
|
5
|
|
|
|
Compare BC879,112 with alternatives