BC858A
vs
BC858AW_R2_10001
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
NXP SEMICONDUCTORS
PANJIT INTERNATIONAL INC
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Collector Current-Max (IC)
0.1 A
0.1 A
Collector-Emitter Voltage-Max
30 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
125
110
JESD-30 Code
R-PDSO-G3
Number of Elements
1
1
Number of Terminals
3
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
PNP
PNP
Qualification Status
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Transition Frequency-Nom (fT)
100 MHz
VCEsat-Max
0.65 V
Base Number Matches
39
1
Rohs Code
Power Dissipation-Max (Abs)
0.2 W
Compare BC858A with alternatives
Compare BC858AW_R2_10001 with alternatives