BC856B_R2_00001
vs
MMUN2114L
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
PAN JIT INTERNATIONAL INC
|
MOTOROLA INC
|
| Package Description |
SMALL OUTLINE, R-PDSO-G3
|
SMALL OUTLINE, R-PDSO-G3
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
| Collector-Emitter Voltage-Max |
65 V
|
50 V
|
| Configuration |
SINGLE
|
SINGLE WITH BUILT-IN RESISTOR
|
| DC Current Gain-Min (hFE) |
220
|
80
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| JESD-609 Code |
e3
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN
|
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
200 MHz
|
|
| Base Number Matches |
1
|
3
|
| HTS Code |
|
8541.21.00.95
|
| Additional Feature |
|
BUILT-IN BIAS RESISTOR RATIO IS 1:4.7
|
| JEDEC-95 Code |
|
TO-236AB
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation Ambient-Max |
|
0.2 W
|
| Qualification Status |
|
Not Qualified
|
|
|
|
Compare BC856B_R2_00001 with alternatives
Compare MMUN2114L with alternatives