MMUN2114L
vs
PDTA113EK
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
MOTOROLA INC
NEXPERIA
Package Description
SMALL OUTLINE, R-PDSO-G3
SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.21.00.95
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 1:4.7
BUILT IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC)
0.1 A
0.1 A
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
80
30
JEDEC-95 Code
TO-236AB
TO-236
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
PNP
PNP
Power Dissipation Ambient-Max
0.2 W
Qualification Status
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
3
Rohs Code
Date Of Intro
2017-02-01
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Compare MMUN2114L with alternatives
Compare PDTA113EK with alternatives