BC850BTR
vs
BC850BW-AU_R2_000A1
feature comparison
All Stats
Differences Only
Pbfree Code
No
Rohs Code
No
Yes
Part Life Cycle Code
Active
Active
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
PAN JIT INTERNATIONAL INC
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
Additional Feature
LOW NOISE
Collector-Base Capacitance-Max
2.5 pF
Collector-Emitter Voltage-Max
50 V
45 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
200
200
JESD-30 Code
R-PDSO-G3
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
NPN
NPN
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
300 MHz
100 MHz
VCEsat-Max
0.6 V
Base Number Matches
2
1
Package Description
,
Collector Current-Max (IC)
0.1 A
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reference Standard
AEC-Q101
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare BC850BTR with alternatives
Compare BC850BW-AU_R2_000A1 with alternatives