BC850BTR
vs
BC850BW/T3
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
CENTRAL SEMICONDUCTOR CORP
NEXPERIA
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
Additional Feature
LOW NOISE
LOW NOISE
Collector-Base Capacitance-Max
2.5 pF
Collector-Emitter Voltage-Max
50 V
45 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
200
200
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
3
3
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
NPN
NPN
Qualification Status
Not Qualified
Surface Mount
YES
YES
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
300 MHz
100 MHz
VCEsat-Max
0.6 V
Base Number Matches
1
2
Package Description
SMALL OUTLINE, R-PDSO-G3
Date Of Intro
2017-02-01
Collector Current-Max (IC)
0.1 A
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
AMPLIFIER
Compare BC850BTR with alternatives
Compare BC850BW/T3 with alternatives