BC850B vs BC850CLT1 feature comparison

BC850B NXP Semiconductors

Buy Now Datasheet

BC850CLT1 Motorola Mobility LLC

Buy Now Datasheet
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer NXP SEMICONDUCTORS MOTOROLA INC
Part Package Code SOT-23
Package Description PLASTIC PACKAGE-3 SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer NXP
Additional Feature LOW NOISE
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 45 V 45 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 200 420
JEDEC-95 Code TO-236AB TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 0.25 W 0.225 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin (Sn) Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 100 MHz 100 MHz
VCEsat-Max 0.6 V 0.6 V
Base Number Matches 20 1
HTS Code 8541.21.00.95
Collector-Base Capacitance-Max 4.5 pF
Power Dissipation Ambient-Max 0.225 W

Compare BC850B with alternatives

Compare BC850CLT1 with alternatives