BBY62,215
vs
BB833E6327
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
SIEMENS A G
|
| Part Package Code |
SOT-143
|
|
| Package Description |
R-PDSO-G4
|
|
| Pin Count |
4
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
8541.10.00.80
|
| Breakdown Voltage-Min |
30 V
|
|
| Configuration |
SEPARATE, 2 ELEMENTS
|
SINGLE
|
| Diode Capacitance-Nom |
16.5 pF
|
9.3 pF
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
VARIABLE CAPACITANCE DIODE
|
VARIABLE CAPACITANCE DIODE
|
| Frequency Band |
ULTRA HIGH FREQUENCY
|
S BAND
|
| JESD-30 Code |
R-PDSO-G4
|
R-PDSO-G2
|
| JESD-609 Code |
e3
|
|
| Number of Elements |
2
|
1
|
| Number of Terminals |
4
|
2
|
| Operating Temperature-Max |
125 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
30 V
|
|
| Reverse Current-Max |
0.01 µA
|
|
| Reverse Test Voltage |
28 V
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
MATTE TIN
|
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Variable Capacitance Diode Classification |
ABRUPT
|
|
| Base Number Matches |
1
|
3
|
| Diode Capacitance Ratio-Min |
|
11
|
|
|
|
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