BBY51-03WE6433
vs
934050190115
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
SIEMENS A G
NXP SEMICONDUCTORS
Package Description
R-PDSO-G2
R-PDSO-F2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.80
8541.10.00.80
Breakdown Voltage-Min
7 V
32 V
Configuration
SINGLE
SINGLE
Diode Capacitance Ratio-Min
1.55
13.5
Diode Capacitance-Nom
5.3 pF
38.5 pF
Diode Element Material
SILICON
SILICON
Diode Type
VARIABLE CAPACITANCE DIODE
VARIABLE CAPACITANCE DIODE
JESD-30 Code
R-PDSO-G2
R-PDSO-F2
Number of Elements
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
125 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Qualification Status
Not Qualified
Not Qualified
Reverse Current-Max
0.01 µA
Reverse Test Voltage
6 V
Surface Mount
YES
YES
Terminal Form
GULL WING
FLAT
Terminal Position
DUAL
DUAL
Variable Capacitance Diode Classification
HYPERABRUPT
ABRUPT
Base Number Matches
2
1
Pbfree Code
Rohs Code
Part Package Code
SC-79
Pin Count
2
Additional Feature
EXCELLENT MATCHING TO 2% DMA
Diode Cap Tolerance
10%
Frequency Band
VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-609 Code
e3
Terminal Finish
TIN
Compare BBY51-03WE6433 with alternatives
Compare 934050190115 with alternatives