BB814 vs BB804R215 feature comparison

BB814 Infineon Technologies AG

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BB804R215 NXP Semiconductors

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG NXP SEMICONDUCTORS
Part Package Code SOT-23
Package Description R-PDSO-G3 R-PDSO-G3
Pin Count 3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature CAPACITANCE MATCHED TO 3%
Breakdown Voltage-Min 18 V 18 V
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode Cap Tolerance 3.91%
Diode Capacitance Ratio-Min 2.05 1.65
Diode Capacitance-Nom 44.75 pF 42.75 pF
Diode Element Material SILICON SILICON
Diode Type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2 2
Number of Terminals 3 3
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 18 V
Surface Mount YES YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Variable Capacitance Diode Classification ABRUPT ABRUPT
Base Number Matches 4 1
Frequency Band VERY HIGH FREQUENCY
Power Dissipation-Max 0.25 W
Reverse Current-Max 0.02 µA
Reverse Test Voltage 16 V

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Compare BB804R215 with alternatives