BB405B-AMMOPAK vs ZMV930 feature comparison

BB405B-AMMOPAK NXP Semiconductors

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ZMV930 Diodes Incorporated

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS DIODES INC
Package Description O-LALF-W2 R-PDSO-G2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Additional Feature 3% MATCHED SETS ARE AVAILABLE HIGH RELIABILITY, LOW LEAKAGE CURRENT
Breakdown Voltage-Min 30 V 12 V
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Capacitance Ratio-Min 7.6
Diode Element Material SILICON SILICON
Diode Type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
Frequency Band ULTRA HIGH FREQUENCY VERY HIGH FREQUENCY
JESD-30 Code O-LALF-W2 R-PDSO-G2
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 100 °C 125 °C
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Qualification Status Not Qualified Not Qualified
Reverse Current-Max 0.01 µA
Reverse Test Voltage 28 V
Surface Mount NO YES
Terminal Form WIRE GULL WING
Terminal Position AXIAL DUAL
Variable Capacitance Diode Classification ABRUPT HYPERABRUPT
Base Number Matches 1 6
Rohs Code Yes
Diode Capacitance-Nom 8.7 pF
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.33 W
Quality Factor-Min 200
Rep Pk Reverse Voltage-Max 12 V
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

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