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BB135,135 vs NTE612 feature comparison

BB135,135 NXP Semiconductors

Buy Now Datasheet

NTE612 NTE Electronics Inc

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Not Recommended Active
Ihs Manufacturer NXP SEMICONDUCTORS NTE ELECTRONICS INC
Part Package Code SOD
Package Description R-PDSO-G2 O-PBCY-W2
Pin Count 2
Manufacturer Package Code SOD323
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00 8541.10.00.80
Factory Lead Time 52 Weeks
Samacsys Manufacturer NXP NTE ELECTRONICS
Configuration SINGLE SINGLE
Diode Capacitance Ratio-Min 8.9 2.5
Diode Capacitance-Nom 19.25 pF 12 pF
Diode Element Material SILICON SILICON
Diode Type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
Frequency Band ULTRA HIGH FREQUENCY
JESD-30 Code R-PDSO-G2 O-PBCY-W2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 125 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE CYLINDRICAL
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 30 V 30 V
Reverse Current-Max 0.01 µA
Reverse Test Voltage 30 V
Surface Mount YES NO
Terminal Finish Tin (Sn)
Terminal Form GULL WING WIRE
Terminal Position DUAL BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Variable Capacitance Diode Classification ABRUPT ABRUPT
Base Number Matches 1 1
Breakdown Voltage-Min 30 V
Diode Cap Tolerance 10%
Power Dissipation-Max 0.28 W
Quality Factor-Min 400
Diodes » Varactors
Diodes » Varactors

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