BB135,135
vs
BBY51
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Not Recommended
|
Transferred
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
SIEMENS A G
|
| Part Package Code |
SOD
|
|
| Package Description |
R-PDSO-G2
|
R-PDSO-G3
|
| Pin Count |
2
|
|
| Manufacturer Package Code |
SOD323
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00
|
8541.10.00.80
|
| Factory Lead Time |
52 Weeks
|
|
| Samacsys Manufacturer |
NXP
|
|
| Configuration |
SINGLE
|
COMMON CATHODE, 2 ELEMENTS
|
| Diode Capacitance Ratio-Min |
8.9
|
1.55
|
| Diode Capacitance-Nom |
19.25 pF
|
5.3 pF
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
VARIABLE CAPACITANCE DIODE
|
VARIABLE CAPACITANCE DIODE
|
| Frequency Band |
ULTRA HIGH FREQUENCY
|
|
| JESD-30 Code |
R-PDSO-G2
|
R-PDSO-G3
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
2
|
| Number of Terminals |
2
|
3
|
| Operating Temperature-Max |
125 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
-55 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
30 V
|
|
| Reverse Current-Max |
0.01 µA
|
0.01 µA
|
| Reverse Test Voltage |
30 V
|
6 V
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin (Sn)
|
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Variable Capacitance Diode Classification |
ABRUPT
|
HYPERABRUPT
|
| Base Number Matches |
1
|
2
|
| Breakdown Voltage-Min |
|
7 V
|
|
|
|
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