BAW56-T1 vs BAW56LT1 feature comparison

BAW56-T1 Sangdest Microelectronics (Nanjing) Co Ltd

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BAW56LT1 onsemi

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Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD ONSEMI
Package Description R-PDSO-G3 CASE 318-08, TO-236, 3 PIN
Reach Compliance Code unknown not_compliant
Configuration COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Moisture Sensitivity Level 1 1
Number of Elements 2 2
Number of Terminals 3 3
Output Current-Max 0.15 A 0.2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE LONG FORM
Power Dissipation-Max 0.35 W 0.225 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 75 V 70 V
Reverse Recovery Time-Max 0.006 µs 0.006 µs
Surface Mount YES YES
Terminal Form GULL WING WRAP AROUND
Terminal Position DUAL END
Base Number Matches 1 6
Pbfree Code No
Part Package Code SOT-23 (TO-236) 3 LEAD
Pin Count 3
Manufacturer Package Code 318
ECCN Code EAR99
HTS Code 8541.10.00.70
Samacsys Manufacturer onsemi
Forward Voltage-Max (VF) 1.3 V
JEDEC-95 Code TO-236AB
JESD-609 Code e0
Non-rep Pk Forward Current-Max 0.5 A
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 235
Terminal Finish TIN LEAD
Time@Peak Reflow Temperature-Max (s) 30

Compare BAW56-T1 with alternatives

Compare BAW56LT1 with alternatives