BAW56-GT1 vs BAW56W,115 feature comparison

BAW56-GT1 Sangdest Microelectronics (Nanjing) Co Ltd

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BAW56W,115 NXP Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD NXP SEMICONDUCTORS
Package Description R-PDSO-G3 PLASTIC, SMD, SC-70, 3 PIN
Reach Compliance Code unknown compliant
Application GENERAL PURPOSE
Configuration COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Moisture Sensitivity Level 1 1
Number of Elements 2 2
Number of Terminals 3 3
Output Current-Max 0.15 A 0.15 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.35 W 0.2 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 75 V 90 V
Reverse Recovery Time-Max 0.006 µs 0.004 µs
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 2 2
Part Package Code SC-70
Pin Count 3
Manufacturer Package Code SOT323
ECCN Code EAR99
HTS Code 8541.10.00.70
Factory Lead Time 4 Weeks
Samacsys Manufacturer NXP
Forward Voltage-Max (VF) 1.25 V
JESD-609 Code e3
Non-rep Pk Forward Current-Max 4 A
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260
Reverse Current-Max 1 µA
Terminal Finish TIN
Time@Peak Reflow Temperature-Max (s) 30

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Compare BAW56W,115 with alternatives