BAW56-GT1
vs
BAW56
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SANGDEST MICROELECTRONICS (NANJING) CO LTD
|
EIC SEMICONDUCTOR CO LTD
|
| Package Description |
R-PDSO-G3
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| Configuration |
COMMON ANODE, 2 ELEMENTS
|
COMMON ANODE, 2 ELEMENTS
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
2
|
2
|
| Number of Terminals |
3
|
3
|
| Output Current-Max |
0.15 A
|
0.215 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Power Dissipation-Max |
0.35 W
|
0.25 W
|
| Qualification Status |
Not Qualified
|
|
| Rep Pk Reverse Voltage-Max |
75 V
|
85 V
|
| Reverse Recovery Time-Max |
0.006 µs
|
0.004 µs
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
2
|
64
|
| Pbfree Code |
|
Yes
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.70
|
| Operating Temperature-Max |
|
150 °C
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare BAW56-GT1 with alternatives
Compare BAW56 with alternatives