BAV70
vs
BAV70/T3
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
MICROSEMI CORP
|
NXP SEMICONDUCTORS
|
| Reach Compliance Code |
not_compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.70
|
8541.10.00.70
|
| Additional Feature |
LOW LEAKAGE CURRENT
|
|
| Configuration |
COMMON CATHODE, 2 ELEMENTS
|
COMMON CATHODE, 2 ELEMENTS
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1 V
|
1.25 V
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| JESD-609 Code |
e0
|
e3
|
| Non-rep Pk Forward Current-Max |
2 A
|
4 A
|
| Number of Elements |
2
|
2
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Output Current-Max |
0.2 A
|
0.125 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Power Dissipation-Max |
0.3 W
|
0.25 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
70 V
|
100 V
|
| Reverse Recovery Time-Max |
0.006 µs
|
0.004 µs
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
Tin (Sn)
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
70
|
2
|
| Pbfree Code |
|
Yes
|
| Part Package Code |
|
SOT-23
|
| Package Description |
|
R-PDSO-G3
|
| Pin Count |
|
3
|
| JEDEC-95 Code |
|
TO-236AB
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Reverse Current-Max |
|
2.5 µA
|
| Time@Peak Reflow Temperature-Max (s) |
|
40
|
|
|
|
Compare BAV70 with alternatives
Compare BAV70/T3 with alternatives