BAV70 vs BAV74-GT1 feature comparison

BAV70 Microsemi Corporation

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BAV74-GT1 Sangdest Microelectronics (Nanjing) Co Ltd

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Rohs Code No Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MICROSEMI CORP SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code not_compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.70
Additional Feature LOW LEAKAGE CURRENT
Configuration COMMON CATHODE, 2 ELEMENTS SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1 V
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e0
Non-rep Pk Forward Current-Max 2 A
Number of Elements 2 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Output Current-Max 0.2 A 0.2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.3 W 0.35 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 70 V 70 V
Reverse Recovery Time-Max 0.006 µs 0.004 µs
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 70 2
Package Description R-PDSO-G3
Moisture Sensitivity Level 1
Number of Phases 1

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