BAV21WS-GRRG vs BAS21-B0R5G feature comparison

BAV21WS-GRRG Taiwan Semiconductor

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BAS21-B0R5G Taiwan Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD TAIWAN SEMICONDUCTOR CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Application GENERAL PURPOSE EFFICIENCY
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-G2 R-PDSO-G3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 3
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Output Current-Max 0.2 A 0.2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Power Dissipation-Max 0.2 W 0.225 W
Rep Pk Reverse Voltage-Max 250 V 250 V
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 1 1
Additional Feature LOW POWER LOSS
Forward Voltage-Max (VF) 1.25 V
JESD-609 Code e3
Non-rep Pk Forward Current-Max 1 A
Reference Standard IEC-61249-2-21
Reverse Current-Max 0.1 µA
Reverse Test Voltage 200 V
Terminal Finish MATTE TIN

Compare BAV21WS-GRRG with alternatives

Compare BAS21-B0R5G with alternatives