BAV19WRH vs BAS16GWJ feature comparison

BAV19WRH Taiwan Semiconductor

Buy Now Datasheet

BAS16GWJ Nexperia

Buy Now Datasheet
Part Life Cycle Code Active Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD NEXPERIA
Package Description ROHS COMPLIANT, PLASTIC PACKAGE-2
Reach Compliance Code compliant compliant
ECCN Code EAR99
HTS Code 8541.10.00.70
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-F2 R-PDSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Output Current-Max 0.2 A 0.215 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Power Dissipation-Max 0.41 W 0.357 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 250 V 100 V
Reverse Recovery Time-Max 0.05 µs 0.004 µs
Surface Mount YES YES
Terminal Finish MATTE TIN TIN
Terminal Form FLAT GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 1 1
Manufacturer Package Code SOD123
Factory Lead Time 8 Weeks
Samacsys Manufacturer Nexperia
Additional Feature LOW LEAKAGE CURRENT
Breakdown Voltage-Min 100 V
Forward Voltage-Max (VF) 1.25 V
Non-rep Pk Forward Current-Max 1 A
Reference Standard AEC-Q101; IEC-60134
Reverse Current-Max 0.5 µA
Reverse Test Voltage 80 V

Compare BAV19WRH with alternatives

Compare BAS16GWJ with alternatives