BAV19WRH vs BAV19W-T1 feature comparison

BAV19WRH Taiwan Semiconductor

Buy Now Datasheet

BAV19W-T1 Sangdest Microelectronics (Nanjing) Co Ltd

Buy Now Datasheet
Part Life Cycle Code Active Obsolete
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD SANGDEST MICROELECTRONICS (NANJING) CO LTD
Package Description ROHS COMPLIANT, PLASTIC PACKAGE-2 R-PDSO-G2
Reach Compliance Code compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.70
Application GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-F2 R-PDSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Output Current-Max 0.2 A 0.2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.41 W 0.41 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 250 V 100 V
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form FLAT GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 2 1
Rohs Code No

Compare BAV19WRH with alternatives

Compare BAV19W-T1 with alternatives