BAV19W-T1 vs BAV19W-V-GS08 feature comparison

BAV19W-T1 Sangdest Microelectronics (Nanjing) Co Ltd

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BAV19W-V-GS08 Vishay Semiconductors

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Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD VISHAY SEMICONDUCTORS
Package Description R-PDSO-G2 R-PDSO-G2
Reach Compliance Code unknown unknown
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JESD-30 Code R-PDSO-G2 R-PDSO-G2
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 2 2
Output Current-Max 0.2 A 0.2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.41 W 0.41 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 100 V 120 V
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 3 2
Pbfree Code Yes
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.70
Forward Voltage-Max (VF) 1 V
JESD-609 Code e3
Non-rep Pk Forward Current-Max 1 A
Operating Temperature-Max 150 °C
Terminal Finish MATTE TIN

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