BAV103-T
vs
BAV103-GS18
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
NXP SEMICONDUCTORS
VISHAY SEMICONDUCTORS
Package Description
O-LELF-R2
O-LELF-R2
Pin Count
2
2
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.70
8541.10.00.70
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.25 V
1 V
JESD-30 Code
O-LELF-R2
O-LELF-R2
JESD-609 Code
e3
e2
Non-rep Pk Forward Current-Max
5 A
1 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
175 °C
175 °C
Output Current-Max
0.25 A
0.25 A
Package Body Material
GLASS
GLASS
Package Shape
ROUND
ROUND
Package Style
LONG FORM
LONG FORM
Power Dissipation-Max
0.4 W
0.5 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
250 V
250 V
Reverse Current-Max
0.1 µA
15 µA
Reverse Recovery Time-Max
0.05 µs
0.05 µs
Surface Mount
YES
YES
Terminal Finish
TIN
TIN SILVER
Terminal Form
WRAP AROUND
WRAP AROUND
Terminal Position
END
END
Base Number Matches
2
2
Pbfree Code
Part Package Code
DO-213AA
Application
HIGH VOLTAGE
Breakdown Voltage-Min
250 V
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Reverse Test Voltage
200 V
Time@Peak Reflow Temperature-Max (s)
30
Compare BAV103-T with alternatives
Compare BAV103-GS18 with alternatives