BAV10136
vs
BAV16W
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Contact Manufacturer
Ihs Manufacturer
NXP SEMICONDUCTORS
HITANO ENTERPRISE CORP
Package Description
O-LALF-W2
PLASTIC PACKAGE-2
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.70
8541.10.00.70
Application
GENERAL PURPOSE
Case Connection
ISOLATED
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.25 V
JEDEC-95 Code
DO-35
JESD-30 Code
O-LALF-W2
R-PDSO-G2
Non-rep Pk Forward Current-Max
9 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
200 °C
125 °C
Output Current-Max
0.3 A
0.25 A
Package Body Material
GLASS
PLASTIC/EPOXY
Package Shape
ROUND
RECTANGULAR
Package Style
LONG FORM
SMALL OUTLINE
Power Dissipation-Max
0.35 W
0.35 W
Qualification Status
Not Qualified
Rep Pk Reverse Voltage-Max
60 V
100 V
Reverse Current-Max
0.1 µA
Reverse Recovery Time-Max
0.006 µs
0.006 µs
Surface Mount
NO
YES
Terminal Form
WIRE
GULL WING
Terminal Position
AXIAL
DUAL
Base Number Matches
1
2
Rohs Code
Additional Feature
LOW POWER LOSS
Operating Temperature-Min
-55 °C
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare BAV10136 with alternatives
Compare BAV16W with alternatives