BAT42W
vs
TSS42U
feature comparison
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
GALAXY SEMI-CONDUCTOR CO LTD
|
TAIWAN SEMICONDUCTOR CO LTD
|
| Package Description |
R-PDSO-G2
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.70
|
8541.10.00.70
|
| Application |
FAST RECOVERY
|
GENERAL PURPOSE
|
| Breakdown Voltage-Min |
30 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
1 V
|
0.65 V
|
| JESD-30 Code |
R-PDSO-G2
|
R-PBCC-N2
|
| Non-rep Pk Forward Current-Max |
4 A
|
4 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
125 °C
|
125 °C
|
| Output Current-Max |
0.2 A
|
0.2 A
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
CHIP CARRIER
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Power Dissipation-Max |
0.2 W
|
0.15 W
|
| Rep Pk Reverse Voltage-Max |
30 V
|
30 V
|
| Reverse Current-Max |
0.5 µA
|
0.5 µA
|
| Reverse Recovery Time-Max |
0.005 µs
|
0.005 µs
|
| Reverse Test Voltage |
25 V
|
25 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
SCHOTTKY
|
SCHOTTKY
|
| Terminal Form |
GULL WING
|
NO LEAD
|
| Terminal Position |
DUAL
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Base Number Matches |
2
|
5
|
| Samacsys Manufacturer |
|
Taiwan Semiconductor
|
| JESD-609 Code |
|
e4
|
| Operating Temperature-Min |
|
-55 °C
|
| Terminal Finish |
|
GOLD
|
|
|
|
Compare BAT42W with alternatives
Compare TSS42U with alternatives