BAS321J
vs
BAV21WS-7-F
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
NEXPERIA
DIODES INC
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.70
8541.10.00.70
Additional Feature
LOW LEAKAGE CURRENT
Application
HIGH VOLTAGE
HIGH VOLTAGE FAST RECOVERY
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
RECTIFIER DIODE
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.25 V
1.25 V
JESD-30 Code
R-PDSO-F2
R-PDSO-G2
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
1
Non-rep Pk Forward Current-Max
3 A
1.7 A
Number of Elements
1
1
Number of Phases
1
1
Number of Terminals
2
2
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Output Current-Max
0.25 A
0.2 A
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Power Dissipation-Max
0.42 W
0.2 W
Reference Standard
AEC-Q101; IEC-60134
Rep Pk Reverse Voltage-Max
250 V
250 V
Reverse Current-Max
0.1 µA
0.1 µA
Reverse Recovery Time-Max
0.05 µs
0.05 µs
Reverse Test Voltage
200 V
200 V
Surface Mount
YES
YES
Terminal Finish
TIN
MATTE TIN
Terminal Form
FLAT
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
30
Base Number Matches
1
1
Pbfree Code
Pin Count
2
Samacsys Manufacturer
Diodes Incorporated
Breakdown Voltage-Min
250 V
Qualification Status
Not Qualified
Compare BAS321J with alternatives
Compare BAV21WS-7-F with alternatives