BAS216,115
vs
BAS21-E3-08
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
NXP SEMICONDUCTORS
|
VISHAY INTERTECHNOLOGY INC
|
Package Description |
CERAMIC PACKAGE-2
|
ROHS COMPLIANT PACKAGE-3
|
Pin Count |
2
|
3
|
Reach Compliance Code |
unknown
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.10.00.70
|
8541.10.00.70
|
Samacsys Manufacturer |
NXP
|
Vishay
|
Application |
GENERAL PURPOSE
|
|
Configuration |
SINGLE
|
|
Diode Element Material |
SILICON
|
|
Diode Type |
RECTIFIER DIODE
|
|
Forward Voltage-Max (VF) |
1.25 V
|
|
JESD-30 Code |
R-CDSO-R2
|
|
Non-rep Pk Forward Current-Max |
4 A
|
|
Number of Elements |
1
|
|
Number of Phases |
1
|
|
Number of Terminals |
2
|
|
Operating Temperature-Max |
150 °C
|
|
Output Current-Max |
0.25 A
|
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
|
Package Shape |
RECTANGULAR
|
|
Package Style |
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel) |
260
|
|
Power Dissipation-Max |
0.4 W
|
|
Qualification Status |
Not Qualified
|
|
Rep Pk Reverse Voltage-Max |
85 V
|
|
Reverse Current-Max |
1 µA
|
|
Reverse Recovery Time-Max |
0.004 µs
|
|
Surface Mount |
YES
|
|
Terminal Form |
WRAP AROUND
|
|
Terminal Position |
DUAL
|
|
Time@Peak Reflow Temperature-Max (s) |
40
|
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
Yes
|
Factory Lead Time |
|
12 Weeks
|
|
|
|
Compare BAS216,115 with alternatives
-
BAS216,115 vs BAS21J
-
BAS216,115 vs BAS21
-
BAS216,115 vs 934025530115
-
BAS216,115 vs BAS21-7
-
BAS216,115 vs BAS21H
-
BAS216,115 vs BAS21-T3
-
BAS216,115 vs BAS21J,115
-
BAS216,115 vs BAS216/T1
-
BAS216,115 vs BAS21H,115
Compare BAS21-E3-08 with alternatives