BAS21-B0RFG vs BAS21-TG-WS feature comparison

BAS21-B0RFG Taiwan Semiconductor

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BAS21-TG-WS Willas Electronic Corp

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Rohs Code Yes Yes
Part Life Cycle Code Active Contact Manufacturer
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD WILLAS ELECTRONIC CORP
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Additional Feature LOW POWER LOSS
Application EFFICIENCY
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1 1
Non-rep Pk Forward Current-Max 1 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 0.2 A 0.2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.225 W 0.225 W
Reference Standard IEC-61249-2-21
Rep Pk Reverse Voltage-Max 250 V 250 V
Reverse Current-Max 0.1 µA
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Reverse Test Voltage 200 V
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 1
Package Description R-PDSO-G3

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