BAS21-B0R5G vs BAS21Q feature comparison

BAS21-B0R5G Taiwan Semiconductor

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BAS21Q Yangzhou Yangjie Electronics Co Ltd

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD YANGZHOU YANGJIE ELECTRONICS CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Additional Feature LOW POWER LOSS
Application EFFICIENCY
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 1 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 0.2 A 0.2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Power Dissipation-Max 0.225 W 0.25 W
Reference Standard IEC-61249-2-21 AEC-Q101
Rep Pk Reverse Voltage-Max 250 V 250 V
Reverse Current-Max 0.1 µA
Reverse Recovery Time-Max 0.05 µs 0.05 µs
Reverse Test Voltage 200 V
Surface Mount YES YES
Terminal Finish MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Base Number Matches 1 2
Package Description R-PDSO-G3

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