BAS116/T1 vs BAS116-AU_R2_000A1 feature comparison

BAS116/T1 NXP Semiconductors

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BAS116-AU_R2_000A1 PanJit Semiconductor

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer NXP SEMICONDUCTORS PAN JIT INTERNATIONAL INC
Part Package Code SOT-23
Package Description R-PDSO-G3 R-PDSO-G3
Pin Count 3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Additional Feature LOW LEAKAGE CURRENT
Application GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 0.215 A 0.2 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Power Dissipation-Max 0.25 W 0.25 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 85 V 100 V
Reverse Recovery Time-Max 3 µs 3 µs
Surface Mount YES YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 2 1
Forward Voltage-Max (VF) 0.9 V
Non-rep Pk Forward Current-Max 4 A
Operating Temperature-Min -55 °C
Reference Standard AEC-Q101

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Compare BAS116-AU_R2_000A1 with alternatives