BAR50-02LE6327TR
vs
BAR5002VH6327XTSA1
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INFINEON TECHNOLOGIES AG
|
| Package Description |
ROHS COMPLIANT, LEADLESS, TSLP-2-1, 2 PIN
|
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.80
|
|
| Additional Feature |
LOW DISTORTION
|
|
| Application |
ATTENUATOR; SWITCHING
|
|
| Breakdown Voltage-Min |
50 V
|
|
| Configuration |
SINGLE
|
|
| Diode Capacitance-Max |
0.5 pF
|
|
| Diode Element Material |
SILICON
|
|
| Diode Forward Resistance-Max |
4.5 Ω
|
|
| Diode Type |
PIN DIODE
|
PIN DIODE
|
| Frequency Band |
HIGH FREQUENCY TO C BAND
|
|
| JESD-30 Code |
R-XBCC-N2
|
|
| Minority Carrier Lifetime-Nom |
1.1 µs
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
2
|
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
UNSPECIFIED
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
CHIP CARRIER
|
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Power Dissipation-Max |
0.25 W
|
|
| Surface Mount |
YES
|
|
| Technology |
POSITIVE-INTRINSIC-NEGATIVE
|
|
| Terminal Form |
NO LEAD
|
|
| Terminal Position |
BOTTOM
|
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Base Number Matches |
1
|
1
|
| Factory Lead Time |
|
4 Weeks
|
| Samacsys Manufacturer |
|
Infineon
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Terminal Finish |
|
Matte Tin (Sn)
|
|
|
|
Compare BAR50-02LE6327TR with alternatives