B1S vs MB1S feature comparison

B1S HY Electronic Corp

Buy Now Datasheet

MB1S onsemi

Buy Now Datasheet
Part Life Cycle Code Contact Manufacturer Active
Ihs Manufacturer HY ELECTRONIC CORP ONSEMI
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.70
Breakdown Voltage-Min 100 V 100 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1 V
JESD-30 Code R-PDSO-G4 R-PDSO-G4
Non-rep Pk Forward Current-Max 30 A 35 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4 4
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 0.8 A 0.5 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Current-Max 5 µA 5 µA
Reverse Test Voltage 100 V 100 V
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 2 1
Pbfree Code Yes
Package Description SOIC-4
Manufacturer Package Code 751EP
Factory Lead Time 18 Weeks
Samacsys Manufacturer onsemi
JESD-609 Code e3
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 1.4 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30

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