AUIRFR024N
vs
BUZ71
feature comparison
All Stats
Differences Only
Rohs Code
Yes
No
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
SILICONIX INC
Package Description
DPAK-3
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Factory Lead Time
39 Weeks
Samacsys Manufacturer
Infineon
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas)
71 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE
DS Breakdown Voltage-Min
55 V
Drain Current-Max (ID)
17 A
12 A
Drain-source On Resistance-Max
0.075 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
e0
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
45 W
40 W
Pulsed Drain Current-Max (IDM)
68 A
Qualification Status
Not Qualified
Surface Mount
YES
NO
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Base Number Matches
3
2
Compare AUIRFR024N with alternatives
Compare BUZ71 with alternatives