AUIRF7103Q
vs
RF1K4915496
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
HARRIS SEMICONDUCTOR
Package Description
SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Infineon
Additional Feature
HIGH RELIABILITY
ESD PROTECTED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)
22 mJ
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
50 V
60 V
Drain Current-Max (ID)
3 A
2 A
Drain-source On Resistance-Max
0.13 Ω
0.15 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MS-012AA
MS-012AA
JESD-30 Code
R-PDSO-G8
R-PDSO-G8
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
2
2
Number of Terminals
8
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
25 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Matte Tin (Sn)
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Operating Temperature-Max
150 °C
Turn-off Time-Max (toff)
155 ns
Turn-on Time-Max (ton)
50 ns
Compare AUIRF7103Q with alternatives
Compare RF1K4915496 with alternatives