AUIRF3315S
vs
IRF3315SPBF
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
INTERNATIONAL RECTIFIER CORP
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID)
21 A
21 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Number of Elements
1
1
Operating Temperature-Max
175 °C
175 °C
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
94 W
94 W
Surface Mount
YES
YES
Base Number Matches
3
1
Pbfree Code
Package Description
LEAD FREE, D2PAK-3
Pin Count
3
HTS Code
8541.29.00.95
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
350 mJ
Case Connection
DRAIN
DS Breakdown Voltage-Min
150 V
Drain-source On Resistance-Max
0.082 Ω
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Power Dissipation Ambient-Max
94 W
Pulsed Drain Current-Max (IDM)
84 A
Qualification Status
Not Qualified
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compare AUIRF3315S with alternatives
Compare IRF3315SPBF with alternatives