AT-01635
vs
2N6599
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
HEWLETT PACKARD CO
|
NXP SEMICONDUCTORS
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.75
|
|
| Collector Current-Max (IC) |
0.15 A
|
0.075 A
|
| Collector-Emitter Voltage-Max |
12 V
|
15 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
30
|
|
| Highest Frequency Band |
S BAND
|
ULTRA HIGH FREQUENCY BAND
|
| JESD-30 Code |
O-CRDB-F4
|
O-MBCY-W4
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Temperature-Max |
200 °C
|
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
METAL
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
DISK BUTTON
|
CYLINDRICAL
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
1 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Terminal Form |
FLAT
|
WIRE
|
| Terminal Position |
RADIAL
|
BOTTOM
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
7000 MHz
|
3500 MHz
|
| Base Number Matches |
1
|
1
|
| Package Description |
|
CYLINDRICAL, O-MBCY-W4
|
| JEDEC-95 Code |
|
TO-72
|
|
|
|
Compare AT-01635 with alternatives
Compare 2N6599 with alternatives