AS6C1016-55BIN vs KM616FS1010AFI-7 feature comparison

AS6C1016-55BIN Alliance Memory Inc

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KM616FS1010AFI-7 Samsung Semiconductor

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Pbfree Code Yes
Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ALLIANCE MEMORY INC SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA BGA
Package Description TFBGA, BGA48,6X8,30 TFBGA, BGA48,6X8,30
Pin Count 48 48
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.41 8542.32.00.41
Factory Lead Time 16 Weeks
Samacsys Manufacturer Alliance Memory
Access Time-Max 55 ns 70 ns
I/O Type COMMON COMMON
JESD-30 Code R-PBGA-B48 R-PBGA-B48
Length 8 mm 7 mm
Memory Density 1048576 bit 1048576 bit
Memory IC Type STANDARD SRAM STANDARD SRAM
Memory Width 16 16
Moisture Sensitivity Level 3
Number of Functions 1 1
Number of Terminals 48 48
Number of Words 65536 words 65536 words
Number of Words Code 64000 64000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 85 °C 85 °C
Operating Temperature-Min -40 °C -40 °C
Organization 64KX16 64KX16
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA TFBGA
Package Equivalence Code BGA48,6X8,30 BGA48,6X8,30
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Seated Height-Max 1.2 mm 1.2 mm
Standby Current-Max 0.00002 A
Standby Voltage-Min 2 V 1 V
Supply Current-Max 0.06 mA 0.03 mA
Supply Voltage-Max (Vsup) 5.5 V 2.7 V
Supply Voltage-Min (Vsup) 2.7 V 2.3 V
Supply Voltage-Nom (Vsup) 3 V 2.5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade INDUSTRIAL INDUSTRIAL
Terminal Form BALL BALL
Terminal Pitch 0.75 mm 0.75 mm
Terminal Position BOTTOM BOTTOM
Width 6 mm 6 mm
Base Number Matches 2 1
JESD-609 Code e0
Terminal Finish TIN LEAD

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