AS6C1016-55BIN
vs
KM616FS1010AFI-7
feature comparison
All Stats
Differences Only
Pbfree Code
Yes
Rohs Code
Yes
No
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
ALLIANCE MEMORY INC
SAMSUNG SEMICONDUCTOR INC
Part Package Code
BGA
BGA
Package Description
TFBGA, BGA48,6X8,30
TFBGA, BGA48,6X8,30
Pin Count
48
48
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8542.32.00.41
8542.32.00.41
Factory Lead Time
16 Weeks
Samacsys Manufacturer
Alliance Memory
Access Time-Max
55 ns
70 ns
I/O Type
COMMON
COMMON
JESD-30 Code
R-PBGA-B48
R-PBGA-B48
Length
8 mm
7 mm
Memory Density
1048576 bit
1048576 bit
Memory IC Type
STANDARD SRAM
STANDARD SRAM
Memory Width
16
16
Moisture Sensitivity Level
3
Number of Functions
1
1
Number of Terminals
48
48
Number of Words
65536 words
65536 words
Number of Words Code
64000
64000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
85 °C
85 °C
Operating Temperature-Min
-40 °C
-40 °C
Organization
64KX16
64KX16
Output Characteristics
3-STATE
3-STATE
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Code
TFBGA
TFBGA
Package Equivalence Code
BGA48,6X8,30
BGA48,6X8,30
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial
PARALLEL
PARALLEL
Qualification Status
Not Qualified
Not Qualified
Seated Height-Max
1.2 mm
1.2 mm
Standby Current-Max
0.00002 A
Standby Voltage-Min
2 V
1 V
Supply Current-Max
0.06 mA
0.03 mA
Supply Voltage-Max (Vsup)
5.5 V
2.7 V
Supply Voltage-Min (Vsup)
2.7 V
2.3 V
Supply Voltage-Nom (Vsup)
3 V
2.5 V
Surface Mount
YES
YES
Technology
CMOS
CMOS
Temperature Grade
INDUSTRIAL
INDUSTRIAL
Terminal Form
BALL
BALL
Terminal Pitch
0.75 mm
0.75 mm
Terminal Position
BOTTOM
BOTTOM
Width
6 mm
6 mm
Base Number Matches
2
1
JESD-609 Code
e0
Terminal Finish
TIN LEAD
Compare AS6C1016-55BIN with alternatives
Compare KM616FS1010AFI-7 with alternatives