APT8015JVFR vs IXFN50N80Q2 feature comparison

APT8015JVFR Microsemi Corporation

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IXFN50N80Q2 IXYS Corporation

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer MICROSEMI CORP IXYS CORP
Part Package Code ISOTOP
Package Description ISOTOP-4 MINIBLOC-4
Pin Count 4 4
Manufacturer Package Code ISOTOP
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 3600 mJ 5000 mJ
Case Connection ISOLATED ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V 800 V
Drain Current-Max (ID) 44 A 50 A
Drain-source On Resistance-Max 0.15 Ω 0.15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XUFM-X4 R-XUFM-X4
JESD-609 Code e1
Number of Elements 1 1
Number of Terminals 4 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material UNSPECIFIED UNSPECIFIED
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 700 W 890 W
Pulsed Drain Current-Max (IDM) 176 A 200 A
Qualification Status Not Qualified Not Qualified
Reference Standard UL RECOGNIZED UL RECOGNIZED
Surface Mount NO NO
Terminal Finish TIN SILVER COPPER NICKEL
Terminal Form UNSPECIFIED UNSPECIFIED
Terminal Position UPPER UPPER
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 3 2
Additional Feature AVALANCHE RATED

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