APT8015JVFR
vs
APT8015JVR
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
ADVANCED POWER TECHNOLOGY INC
MICROSEMI CORP
Package Description
ISOTOP-4
ISOTOP-4
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
Additional Feature
FRED FET
Avalanche Energy Rating (Eas)
3600 mJ
3600 mJ
Case Connection
ISOLATED
ISOLATED
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
800 V
800 V
Drain Current-Max (ID)
44 A
44 A
Drain-source On Resistance-Max
0.15 Ω
0.15 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PUFM-X4
R-PUFM-X4
Number of Elements
1
1
Number of Terminals
4
4
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
700 W
Pulsed Drain Current-Max (IDM)
176 A
176 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Form
UNSPECIFIED
UNSPECIFIED
Terminal Position
UPPER
UPPER
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
NOT SPECIFIED
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
3
3
Pbfree Code
Part Package Code
ISOTOP
Pin Count
4
Manufacturer Package Code
ISOTOP
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