APT4025BNR
vs
PHW14N50E
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
ADVANCED POWER TECHNOLOGY INC
NXP SEMICONDUCTORS
Package Description
FLANGE MOUNT, R-PSFM-T3
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Additional Feature
AVALANCHE RATED
AVALANCHE ENERGY RATED
Avalanche Energy Rating (Eas)
1210 mJ
920 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
400 V
500 V
Drain Current-Max (ID)
23 A
14 A
Drain-source On Resistance-Max
0.25 Ω
0.4 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-247AD
TO-247
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
310 W
Power Dissipation-Max (Abs)
310 W
Pulsed Drain Current-Max (IDM)
92 A
56 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Transistor Application
SWITCHING
Compare APT4025BNR with alternatives
Compare PHW14N50E with alternatives