PHW14N50E
vs
APT10M30BNR
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
PHILIPS SEMICONDUCTORS
ADVANCED POWER TECHNOLOGY INC
Package Description
,
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID)
14 A
75 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e0
e0
Number of Elements
1
1
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
192 W
360 W
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Tin/Lead (Sn/Pb)
Base Number Matches
2
2
HTS Code
8541.29.00.95
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
1500 mJ
Case Connection
DRAIN
DS Breakdown Voltage-Min
100 V
Drain-source On Resistance-Max
0.03 Ω
Feedback Cap-Max (Crss)
1050 pF
JEDEC-95 Code
TO-247AD
JESD-30 Code
R-PSFM-T3
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Power Dissipation Ambient-Max
360 W
Pulsed Drain Current-Max (IDM)
300 A
Qualification Status
Not Qualified
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
270 ns
Turn-on Time-Max (ton)
160 ns
Compare APT10M30BNR with alternatives